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Hsiang, K.-Y.; Liao, C.-Y.; Liu, J.-H.; Lin, C.-Y.; Lee, J.-Y.; Lou, Z.-F.; Chang, F.-S.; Ray, W.-C.; Li, Z.-X.; Tseng, H.-C.; Wang, C.-C.; Liao, M. H.; Hou, T.-H.; Lee, M. H.
IEEE electron device letters, 11/2022, Letnik: 43, Številka: 11Journal Article
The 3D vertical ferroelectric tunneling junction (FTJ) of bilayer antiferroelectric (AFE) Hf 1-x Zr x O 2 (HZO) and Al 2 O 3 has been demonstrated for NAND-compatible feasibility. A bilayer-type FTJ is explored for the designs of the dielectric interlayer Al 2 O 3 0 nm to 4 nm and the ferroelectric type, while the current mechanism is revealed. The multilevel AFE-FTJ is exhibited for both the Program and Erase operations and realizes a synaptic device. High-density emerging memory and computing-in-memory (CiM) are in high demanded for the future era and can be feasible by the proposed vertical FTJ.
