E-viri
-
Dewey, G.; Chu-Kung, B.; Kotlyar, R.; Metz, M.; Mukherjee, N.; Radosavljevic, M.
2012 Symposium on VLSI Technology (VLSIT), 06/2012Conference Proceeding
This paper summarizes the electrostatics and performance of III-V field effect transistors including thin body planar MOSFETs, 3-D tri-gate MOSFETs, and Tunneling FETs (TFETs). The electrostatics of the III-V devices is shown to improve from thick body planar to thin body planar and then to 3-D tri-gate. Beyond the MOSFET structures, sub-threshold slope (SS) steeper than 60 mV/decade has been demonstrated in III-V TFETs. These III-V devices, especially the 3-D tri-gate MOSFET and TFET, are viable options for future ultra low power applications.
