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Tzu-Hsuan Hsu; Hang Ting Lue; Ya-Chin King; Jung-Yu Hsieh; Lai, E.-K.; Kuang-Yeu Hsieh; Rich Liu; Chih-Yuan Lu
IEEE electron device letters, 05/2007, Letnik: 28, Številka: 5Journal Article
A body-tied FinFET bandgap engineered (BE)-silicon-oxide-nitride-oxide-silicon (SONOS) nand Flash device is successfully demonstrated for the first time. BE-SONOS device with a BE oxide-nitride-oxide barrier is integrated in the FinFET structure with a 30-nm fin width. FinFET BE-SONOS can overcome the unsolvable tradeoff between retention and erase speed of the conventional SONOS. Compared with the current floating-gate Flash devices, FinFET BE-SONOS provides both retention and erase-speed performance, while eliminating the scaling limitations and is, thus, an important candidate for further scaling of nand Flash
