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Varonen, Mikko; Reeves, Rodrigo; Kangaslahti, Pekka; Samoska, Lorene; Kooi, Jacob W.; Cleary, Kieran; Gawande, Rohit S.; Akgiray, Ahmed; Fung, Andy; Gaier, Todd; Weinreb, Sander; Readhead, Anthony C. S.; Lawrence, Charles; Sarkozy, Stephen; Lai, Richard
IEEE transactions on microwave theory and techniques, 03/2016, Letnik: 64, Številka: 3Journal Article
In this paper we discuss the design of low-noise amplifiers (LNAs) for both cryogenic and room-temperature operation in general and take the stability and linearity of the amplifiers into special consideration. Oscillations that can occur within a multi-finger transistor are studied and verified with simulations and measurements. To overcome the stability problem related to the multi-finger transistor design approach a parallel two-finger unit transistor monolithic microwave integrated circuit LNA design technique, which enables the design of wideband and high-linearity LNAs with very stable, predictable, and repeatable operation, is proposed. The feasibility of the proposed design technique is proved by demonstrating a three-stage LNA packaged in a WR10 waveguide housing and fabricated using a 35-nm InP HEMT technology that achieves more than a 20-dB gain from 75 to 116 GHz and 26-33-K noise temperature from 85 to 116 GHz when cryogenically cooled to 27 K.
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