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XIN YU; MAO, Lu-Hong; GUO, Wei-Lian; ZHANG, Shi-Lin; SHENG XIE; YAN CHEN
IEEE electron device letters, 11/2010, Letnik: 31, Številka: 11Journal Article
We demonstrate three-terminal λ-type negative differential resistance (NDR) tunneling real-space transfer transistors (TRSTT) with InGaAs and a δ-doped GaAs dual-channel structure on a (100) GaAs substrate. The NDR mechanism is attributed to the electron tunneling transfer from a high-mobility InGaAs channel to a low-mobility δ-doped GaAs channel, as well as to a gate electrode through a Schottky cap layer. The maximum of the peak-to-valley current ratio and the transconductance of the peak current density ( g m = Δ J P /Δ V GS ) reach 3.3 and 72 mS/mm, respectively. The invert operation of MOBILE is realized by employing two TRSTTs connected in series at room temperature.
