E-viri
PDF
Recenzirano
Odprti dostop
-
Ovchinnikov, A. V.; Chefonov, O. V.; Agranat, M. B.; Kudryavtsev, A. V.; Mishina, E. D.; Yurkevich, A. A.
Optics express, 08/2021, Letnik: 29, Številka: 16Journal Article
We report the results of experimental studies and numerical simulation of the dynamics of the electron-hole pairs formation in silicon under the action of a two-period terahertz pulse with a maximum electric field strength of up to 23 MV/cm. It is shown that an inhomogeneous distribution of the charge carrier concentration over the depth of the silicon sample is formed, which persists for several microseconds. This inhomogeneity is formed due to a sharp increase in the rate of filling the conduction band with free carriers in the subsurface input layer of the silicon wafer, which occurs at a field strength above 15 MV/cm.
