E-viri
Recenzirano
Odprti dostop
-
Gromovyi, M.; El Kurdi, M.; Checoury, X.; Herth, E.; Tabataba-Vakili, F.; Bhat, N.; Courville, A.; Semond, F.; Boucaud, P.
Optics express, 06/2022, Letnik: 30, Številka: 12Journal Article
III-Nitride semiconductors are promising materials for on-chip integrated photonics. They provide a wide transparency window from the ultra-violet to the infrared that can be exploited for second-order nonlinear conversions. Here we demonstrate a photonics platform based on epitaxial GaN-on-insulator on silicon. The transfer of the epi-material on SiO 2 is achieved through wafer bonding. We show that quality factors up to 230 000 can be achieved with this platform at telecommunication wavelengths. Resonant second harmonic generation is demonstrated with a continuous wave conversion efficiency of 0.24%/W.
