E-viri
Recenzirano
Odprti dostop
-
Herfst, R. W.; Steeneken, P. G.; Tiggelman, M. P. J.; Stulemeijer, J.; Schmitz, J.
IEEE transactions on semiconductor manufacturing, 08/2012, Letnik: 25, Številka: 3Journal Article, Conference Proceeding
We present a fast radio frequency-capacitance-voltage (RF-CV) method to measure the CV relation of an electronic device. The approach is more accurate, much faster, and more cost effective compared to the existing off-the-shelf solutions. Capacitances are determined using a single-frequency 1-port S-parameter setup constructed from discrete components. We introduce a new way to correct for nonlinearities of the used components, which greatly increases the accuracy with which the phase and magnitude of the reflected signal is measured. The measurement technique is validated on an RF microelectromechanical systems capacitive switch and a barium-strontium-titanate tunable capacitor. Complete CV curves are measured in less than a millisecond, with a measurement accuracy well below 1%.
![loading ... loading ...](themes/default/img/ajax-loading.gif)
Vnos na polico
Trajna povezava
- URL:
Faktor vpliva
Dostop do baze podatkov JCR je dovoljen samo uporabnikom iz Slovenije. Vaš trenutni IP-naslov ni na seznamu dovoljenih za dostop, zato je potrebna avtentikacija z ustreznim računom AAI.
Leto | Faktor vpliva | Izdaja | Kategorija | Razvrstitev | ||||
---|---|---|---|---|---|---|---|---|
JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
Baze podatkov, v katerih je revija indeksirana
Ime baze podatkov | Področje | Leto |
---|
Povezave do osebnih bibliografij avtorjev | Povezave do podatkov o raziskovalcih v sistemu SICRIS |
---|
Vir: Osebne bibliografije
in: SICRIS
To gradivo vam je dostopno v celotnem besedilu. Če kljub temu želite naročiti gradivo, kliknite gumb Nadaljuj.