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Hsieh, Dong-Ru; Lin, Kun-Cheng; Chao, Tien-Sheng
IEEE journal of the Electron Devices Society, 2019, Letnik: 7Journal Article
In this paper, the influence of nitrous oxide (N 2 O) nitridation temperatures on p-type Pi-gate (PG) poly-Si junctionless accumulation mode (JAM) TFTs is experimentally investigated. The tetraethoxysilane (TEOS) gate oxide quality for PG JAM TFTs can be significantly improved by increasing N 2 O nitridation temperatures (TN) from 700°C to 800°C in N2O ambient, resulting in the improvement of average subthreshold swing (A.S.S.), increase of on current (ION), and enhancement of TEOS gate oxide breakdown E-field (EOBD). PG JAM TFTs by means of a proper channel doping concentration (N ch = 5 × 1018 cm -3 ) and a suitable T N (800°C) exhibit a steep A.S.S. ~96 mV/dec. and a large E OBD ~12.1 MV/cm.
