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Dinh, Toan; Phan, Hoang-Phuong; Kozeki, Takahiro; Qamar, Afzaal; Namazu, Takahiro; Nguyen, Nam-Trung; Dao, Dzung Viet
RSC advances, 01/2015, Letnik: 5, Številka: 128Journal Article
We report for the first time the thermoresistive property of p-type single crystalline 3C–SiC (p-3C–SiC), which was epitaxially grown on a silicon (Si) wafer, and then transferred to a glass substrate using a Focused Ion Beam (FIB) technique. A negative and relatively large temperature coefficient of resistance (TCR) up to −5500 ppm K −1 was observed. This TCR is attributed to two activation energy thresholds of 45 meV and 52 meV, corresponding to temperatures below and above 450 K, respectively, and a small reduction of hole mobility with increasing temperature. The large TCR indicates the suitability of p-3C–SiC for thermal-based sensors working in high-temperature environments.
