First-principles calculations are presented for Si, Ge, Sn doping of LiGaO2. Both Si Ga and Ge Ga are found to be shallow donors. Sn Ga is found to be a somewhat deeper donor. The site preference is studied and all three group-IV dopants are found to favor the Ga over the Li site when the Fermi level is in the upper part of the gap, corresponding to n-type doping and for Li-rich growth conditions. The prospects for n-type doping are thus favorable. N O is found to be amphoteric with both deep donor and acceptor type transition levels. Zn has a significant site competition between Zn Li (donor) and Zn Ga (acceptor) levels, which would pin the Fermi level in the middle of the gap. Thus, p-type doping cannot be achieved with these dopants.