Surface damage caused by ionizing radiation in SiO2 passivated silicon particle detectors consists mainly of theaccumulation of a positively charged layer along withtrapped-oxide-charge and interface traps inside the oxide and closeto the Si/SiO2-interface. High density positive interface netcharge can be detrimental to the operation of a multi-channel n-on-p sensor since the inversion layer generated under theSi/SiO2-interface can cause loss of position resolution bycreating a conduction channel between the electrodes. In theinvestigation of the radiation-induced accumulation of oxide chargeand interface traps, a capacitance-voltage characterization study ofn/γ- and γ-irradiated Metal-Oxide-Semiconductor (MOS)capacitors showed that close agreement between measurement andsimulation were possible when oxide charge density was complementedby both acceptor- and donor-type deep interface traps with densitiescomparable to the oxide charges. Corresponding inter-stripresistance simulations of a n-on-p sensor with the tuned oxidecharge density and interface traps show close agreement withexperimental results. The beneficial impact of radiation-inducedaccumulation of deep interface traps on inter-electrode isolationmay be considered in the optimization of the processing parametersof isolation implants on n-on-p sensors for the extremeradiation environments.