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Qamar, Afzaal; Dao, Dzung Veit; Tanner, Philip; Phan, Hoang-Phuong; Dinh, Toan; Dimitrijev, Sima
Applied physics express, 06/2015, Letnik: 8, Številka: 6Journal Article
This article reports for the first time the electrical properties of fabricated n-3C-SiC/p-Si heterojunction diodes under external mechanical stress in the 110 direction. An anisotype heterojunction diode of n-3C-SiC/p-Si was fabricated by depositing 3C-SiC onto the Si substrate by low-pressure chemical vapor deposition. The mechanical stress significantly affected the scaling current density of the heterojunction. The scaling current density increases with stress and is explained in terms of a band offset reduction at the SiC/Si interface under applied stress. A reduction in the barrier height across the junction owing to applied stress is also explained quantitatively.
