As a first example, herein we show that g‐Si4N3 is expected to act as a metal‐free ferromagnet featuring both charge and spin current rectification simultaneously. Such rectification is crucial for envisioning devices that contain both logic and memory functionality on a single chip. The spin coherent quantum‐transport calculations on g‐Si4N3 reveal that the chosen system is a unique molecular spin filter, the current‐voltage characteristics of which is asymmetric in nature, which can create a perfect background for synchronous charge and spin current rectification. To shed light on this highly unusual in‐silico observation, we have meticulously inspected the bias‐dependent modulation of the spin‐polarized eigenstates. The results indicate that, whereas only the localized 2p orbitals of the outer‐ring (OR) Si atoms participate in the transmission process in the positive bias, both OR Si and N atoms contribute in the reverse bias. Furthermore, we have evaluated the spin‐polarized electron‐transfer rate in the tunneling regime, and the results demonstrate that the transfer rates are unequal in the positive and negative bias range, leading to the possible realization of a simultaneous logic–memory device. Two in one: The results of studies on the spin‐polarized electron‐transfer rate against the applied bias explain the origin of dual spin and charge current rectification.