In the field of detector development for High Energy Physics, the so-called Transient Current Technique (TCT) is used to characterize the electric field profile and the charge trapping inside silicon radiation detectors where particles or photons create electron-hole pairs in the bulk of a semiconductor device, as PiN diodes. In the standard approach, the TCT signal originates from the free carriers generated close to the surface of a silicon detector, by short pulses of light or by alpha particles. This work proposes a new principle of charge injection by means of lateral PN junctions implemented in one of the detector electrodes, called the electrical TCT (el-TCT). This technique is fully compatible with CMOS technology and therefore opens new perspectives for assessment of radiation detectors performances.