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Ding, X.M.; Yuan, Z.L.; Hu, H.T.; Li, Z.S.; Chen, Y.F.; Chen, X.Y.; Cao, X.A.; Hou, X.Y.; Wang, Xun; Lu, E.D.; Xu, S.H.; Xu, P.S.; Zhang, X.Y.
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 12/1997, Letnik: 133, Številka: 1Journal Article
Dipping of GaAs (1 0 0) wafers in S 2Cl 2 or S 2Cl 2 + CCl 4 solution has been previously found effective to passivating the GaAs surface. Application of synchrotron radiation photoelectron spectroscopy (SRPES) to such a surface reveals the presence of various S-containing species on the surface. Although bulk-like As x S y phases prevail on the as-treated surface, annealing of the sample to above 150°C results in a thorough transfer of S atoms from AsS to GaS, indicating that steady passivation is associated with the presence of GaS bonds at the surface.
