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Kim, Y.H.; Yun, W.S.; Ruh, H.; Kim, C.S.; Kim, J.W.; Shin, Y.H.; Kim, M.D.; Oh, J.E.
Journal of crystal growth, 02/2010, Letnik: 312, Številka: 5Journal Article
Bat-like InN nanostructures were successfully grown on GaN/AlN/Si(1 1 1) substrates using molecular beam epitaxy method. The initial growth behavior and structural properties of InN nanobats were studied from a nanostructural point of view. During the initial stage of the growth, a nucleation process and a shape-decision process took place in which 3-dimensional (3-D) GaN nanoislands and nanorods were formed on AlN initiation layer/Si substrate. This was followed by the independent growth of 3-D InN nanoislands and nanorods. Lateral expansion of the InN nanobats was observed, and the diameter of InN bats then reached a fixed value.
