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  • Status of the CLEO III sili...
    von Toerne, E.; Alam, M.S.; Alexander, J.P.; Anastassov, A.; Arndt, K.; Bean, A.; Blanc, F.; Boyd, G.; Brandenburg, G.W.; Cherwinka, J.W.; Duboscq, J.E.; Eckhart, E.; Ershov, A.; Fast, J.; Foland, A.D.; Hopman, P.I.; Gan, K.K.; Gao, Y.; Kagan, H.P.; Kane, S.; Kazkaz, L.; Kass, R.; Kim, D.; Lee, J.; Magerkurth, A.J.; Miller, D.; Miyamoto, J.; Neustadt, M.; Oliver, J.; Pavlunin, V.; Rush, C.; Selby, T.; Severini, H.; Shepherd, M.; Shipsey, I.; Skubic, P.; Smith, T.; Sterner, P.; Timm, S.; Tournear, D.; Ward, C.W.; Weinberger, M.; Zhang, Q.; Zhao, X.; Zoeller, M.M.

    Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 09/2003, Letnik: 511, Številka: 1
    Journal Article

    The CLEO-III silicon vertex detector is a 4-layer device with double-sided silicon sensors arranged in a barrel design, covering 93% of the solid angle. After initially meeting its design goals of signal-to-noise performance and spatial resolution, the signal efficiency deteriorated on the rφ sensor side in the two innermost layers due to radiation induced sensor effects. Operation of the two outermost layers and the z-coordinate readout in all layers is stable.