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Niu, Y. H.; Munro, A. M.; Cheng, Y.-J.; Tian, Y. Q.; Liu, M. S.; Zhao, J. L.; Bardecker, J. A.; Jen-La Plante, I.; Ginger, D. S.; Jen, A. K.-Y.
Advanced materials (Weinheim), 10/2007, Letnik: 19, Številka: 20Journal Article
Quantum dot light‐emitting diodes with high external quantum efficiency and luminous power efficiency are realized through in situ thermal annealing of a quasi‐monolayer of colloidal nanocrystals on a crosslinked hole‐transport layer. Partial desorption of quantum‐dot surface ligands and improved film morphology contribute to better electrical injection from the organic layers to the quantum dots, resulting in a 3 to 4 fold enhancement of device efficiency with emission exclusively from the quantum dots.
