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  • Correlation between structu...
    da Silva, M.J; Quivy, A.A; González-Borrero, P.P; Moshegov, N.T; Marega, E

    Journal of crystal growth, 07/2001, Letnik: 227
    Journal Article

    The growth of highly inhomogeneous samples is presented as a suitable way to investigate the continuous evolution of self-assembled InAs quantum dots as a function of the thickness of deposited material. A single specific sample allowed a direct comparison of the structural and optical properties of the strained islands using atomic-force microscopy and low-temperature photoluminescence.