E-viri
Recenzirano
-
Byers, Jeffrey; Mack, Chris; Huang, Richard; Jug, Sven
Microelectronic engineering, 07/2002, Letnik: 61Journal Article, Conference Proceeding
In this paper a systematic approach to calibrating resist parameters will be provided. The calibration procedure couples nonlinear least squares fitting algorithms with a lithography simulator to achieve the best match between lithographic data and simulation. The importance of calibrating resist parameters using multiple data sets to achieve a unique and predictive model will be discussed. Several examples will be given for chemically amplified resists.
