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Xia, Qiangfei; Pickett, Matthew D.; Yang, J. Joshua; Li, Xuema; Wu, Wei; Medeiros-Ribeiro, Gilberto; Williams, R. Stanley
Advanced functional materials, July 22, 2011, Letnik: 21, Številka: 14Journal Article
The logical relationship between two previously defined “memory resistors” is revealed by constructing and experimentally demonstrating a three‐terminal memistor equivalent circuit using two two‐terminal memristors. A technique is then presented, using nanoimprint lithography in combination with angle evaporation, to fabricate a single nanoscale device with a footprint of 4F2, where F is the minimum lithographic feature size, that can be operated as either a two‐terminal lateral memristor or a three‐terminal memistor inside a crossbar structure. These devices exhibit repeatable bipolar nonvolatile switching behavior with up to 103 ON/OFF conductance ratios, as well as the desired three‐terminal behavior. A single nanoscale device that can be operated as either a two‐terminal lateral memristor or a three‐terminal memistor inside a crossbar structure is fabricated using a technique based on nanoimprint lithography and angle evaporation.
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Leto | Faktor vpliva | Izdaja | Kategorija | Razvrstitev | ||||
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JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
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in: SICRIS
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