We demonstrate a high power green InGaN/GaN multiple‐quantum‐well (MQW) light emitting diode (LED) with a peak emission wavelength of 516 nm grown on low extended defect density semipolar (11$ \bar 2 $2) bulk GaN substrate by metal organic chemical vapor deposition. The output power and external quantum efficiency (EQE) at drive currents of 20 and 100 mA under direct current (DC) operation were 5.0 mW, 10.5% and 15.6 mW, 6.3%, respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) The paper reports on a high power green InGaN/GaN multi‐quantum‐well light emitting diode with a peak emission wavelength of 516 nm grown on low extended defect density semipolar (11$ \bar 2 $2) bulk GaN. The output power and external quantum efficiency at drive currents of 20 and 100 mA were 5.0 mW, 10.5% and 15.6 mW, 6.3%, respectively.