<h>Single</h>-<h>crystal growth of binary and ternary rare earth silicides</h>

E-viri

Recenzirano

Single-crystal growth of binary and ternary rare earth silicides

Behr, G; Loser, W; Bitterlich, H; Graw, G; Souptel, D; Sampathkumaran, E V

Journal of crystal growth, 07/2001, Letnik: 237-239, Številka: 3

Journal Article

Single crystals of the binary CeSi sub 2 and selected ternary RE sub 2 TMSi sub 3 (RE = Ce, Tb, Dy; TM = Pd, Co, Ni) compounds were grown by vertical floating zone melting both with RF induction heating and optical heating. The compounds exhibit congruent melting behaviour at a composition different from the stoichiometric one. Accordingly, inferior element segregation along the crystal axis was detected. A silicothermic reaction during the growth process serves for melt refining with respect to the oxygen content and crystals practically free of oxide inclusions. The anisotropy of magnetic ordering and the magnetoresistance of selected single-crystalline ternary compounds is briefly described.

Išči dalje

Avtor

Dostop do baze podatkov JCR je dovoljen samo uporabnikom iz Slovenije. Vaš trenutni IP-naslov ni na seznamu dovoljenih za dostop, zato je potrebna avtentikacija z ustreznim računom AAI.

Leto	Faktor vpliva		Izdaja		Kategorija		Razvrstitev
Leto	JCR	SNIP	JCR	SNIP	JCR	SNIP	JCR	SNIP

Povezave do osebnih bibliografij avtorjev	Povezave do podatkov o raziskovalcih v sistemu SICRIS

Vir: Osebne bibliografije in: SICRIS

Naloži sliko

Vnos na polico

Dodajanje gradiva na polico je uspelo.

Dodajanje gradiva na polico je spodletelo.

Dodajanje gradiva na polico ni bilo potrebno.

Trajna povezava

E-pošta

Faktor vpliva

Izberite knjižnično izkaznico:

Baze podatkov, v katerih je revija indeksirana

Citiranje

Tema