Single phase polycrystalline Sn-doped CuInO2 thin films are prepared by the oxygen plasma enhanced reactive evaporation method. X-ray diffraction indicates a preferential orientation of crystallites along the (006) plane on doping while energy dispersive analysis of X-rays and atomic force microscopy are employed to appraise the composition and morphology of the films, respectively. Remarkably, about 2-3 orders of magnitude enhancement in their electrical conductivity than that reported till date is observed. Further, the Sn-doped thin films possess 2-3 orders of magnitude higher carrier concentration (1018-1019/cm3) than undoped films that is associated with a drastic reduction in mobility. Moreover, different conduction mechanisms possible at different temperature regions ranging from around 55 K–450 K are studied in detail. While the transparency of the films is increased from 43% to 85% on doping, the optical band gap decreases from 3.83 eV to 3.5 eV. Display omitted •2-3 orders of magnitude increase in electrical conductivity by tin doping in CuInO2.•First report on analysis of electrical transport mechanisms in the range 55–450 K.•Reorientation of crystallites along (006) plane by tin incorporation in CuInO2.•Optical transparency doubles without adversely affecting electrical conductivity.