E-viri
Recenzirano
-
Follstaedt, D.M.; Allerman, A.A.; Lee, S.R.; Michael, J.R.; Bogart, K.H.A.; Crawford, M.H.; Missert, N.A.
Journal of crystal growth, 02/2008, Letnik: 310, Številka: 4Journal Article
Metalorganic vapor phase epitaxy was used to grow 15 μm of Al 0.26Ga 0.74N on GaN that was patterned with trenches 10 μm wide and 1 μm deep. The top of the AlGaN showed 4-μm-wide areas on either side of the trench centerline that had low threading dislocation densities, measured to be less than ∼1.5×10 8 cm −2. Cross-sectional transmission electron microscopy showed that in the early stages of growth, AlGaN grew at an angle from the corners of the trench and eventually coalesced over the center. These laterally propagating growth sections overgrew the vertical growth in the trench bottom, with the result that low dislocation-density areas formed at the top of the AlGaN. Detailed examination showed that the vertical dislocations from the trench bottom were bent by the angled growth toward the center of the trench where they annihilated with other dislocations, allowing the low dislocation-density areas to form above. Elemental analysis showed that the angled growth sections had slightly lower Al content. The low dislocation-density areas are sufficiently wide to permit optically emitting devices to be grown.
Avtor
![loading ... loading ...](themes/default/img/ajax-loading.gif)
Vnos na polico
Trajna povezava
- URL:
Faktor vpliva
Dostop do baze podatkov JCR je dovoljen samo uporabnikom iz Slovenije. Vaš trenutni IP-naslov ni na seznamu dovoljenih za dostop, zato je potrebna avtentikacija z ustreznim računom AAI.
Leto | Faktor vpliva | Izdaja | Kategorija | Razvrstitev | ||||
---|---|---|---|---|---|---|---|---|
JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
Baze podatkov, v katerih je revija indeksirana
Ime baze podatkov | Področje | Leto |
---|
Povezave do osebnih bibliografij avtorjev | Povezave do podatkov o raziskovalcih v sistemu SICRIS |
---|
Vir: Osebne bibliografije
in: SICRIS
To gradivo vam je dostopno v celotnem besedilu. Če kljub temu želite naročiti gradivo, kliknite gumb Nadaljuj.