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Lai, Erh-Kun; Chien, Wei-Chih; Chen, Yi-Chou; Hong, Tian-Jue; Lin, Yu-Yu; Chang, Kuo-Pin; Yao, Yeong-Der; Lin, Pang; Horng, Sheng-Fu; Gong, Jeng; Tsai, Shih-Chang; Lee, Ching-Hsiung; Hsieh, Sheng-Hui; Chen, Chun-Fu; Shih, Yen-Hao; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan
Japanese Journal of Applied Physics, 04/2010, Letnik: 49, Številka: 4Journal Article
A complementary metal oxide semiconductor (CMOS)-compatible WO x based resistive memory has been developed. The WO x memory layer is made from rapid thermal oxidation of W plugs. The device performs excellent electrical properties. The switching speed is extremely fast (${\sim}2$ ns) and the programming voltage (${<}1.4$ V) is low. For single-level cell (SLC) operation, the device shows a large resistance window, and $10^{8}$-cycle endurance. For multi-level cell (MLC) operation, it demonstrates 2-bit/cell storage with the endurance up to 10000 times. The rapid thermal oxidation (RTO) WO x resistance random access memory (RRAM) is very promising for both high-density and embedded memory applications.
