E-viri
Recenzirano
Odprti dostop
-
Wang, Lili; Chen, Pei; Thongprong, Non; Young, Margaret; Kuttipillai, Padmanaban S.; Jiang, Chuanpeng; Zhang, Pengpeng; Sun, Kai; Duxbury, Phillip M.; Lunt, Richard R.
Advanced materials interfaces, November 23, 2017, Letnik: 4, Številka: 22Journal Article
The growth of epitaxial semiconductors and oxides has long since revolutionized the electronics and optics fields, and continues to be exploited to uncover new physics stemming from quantum interactions. While the recent emergence of halide perovskites offers exciting new opportunities for a range of thin‐film electronics, the principles of epitaxy have yet to be applied to this new class of materials and the full potential of these materials is still not yet known. In this work, single‐domain inorganic halide perovskite epitaxy is demonstrated. This is enabled by reactive vapor phase deposition onto single crystal metal halide substrates with congruent ionic interactions. For the archetypical halide perovskite, cesium tin bromide, two epitaxial phases, a cubic phase and tetragonal phase, are uncovered which emerge via stoichiometry control that are both stabilized with vastly differing lattice constants and accommodated via epitaxial rotation. This epitaxial growth is exploited to demonstrate multilayer 2D quantum wells of a halide‐perovskite system. This work ultimately unlocks new routes to push halide perovskites to their full potential. Single‐domain halide perovskite heteroepitaxy is demonstrated and multiple epitaxial phases of archetypical halide perovskite are uncovered via stiochiometry control. The epitaxial growth is further exploited to demonstrate multilayer 2D quantum wells of a halide‐perovskite system and can ultimately enable their full potential in many emerging applications.
Vnos na polico
Trajna povezava
- URL:
Faktor vpliva
Dostop do baze podatkov JCR je dovoljen samo uporabnikom iz Slovenije. Vaš trenutni IP-naslov ni na seznamu dovoljenih za dostop, zato je potrebna avtentikacija z ustreznim računom AAI.
Leto | Faktor vpliva | Izdaja | Kategorija | Razvrstitev | ||||
---|---|---|---|---|---|---|---|---|
JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
Baze podatkov, v katerih je revija indeksirana
Ime baze podatkov | Področje | Leto |
---|
Povezave do osebnih bibliografij avtorjev | Povezave do podatkov o raziskovalcih v sistemu SICRIS |
---|
Vir: Osebne bibliografije
in: SICRIS
To gradivo vam je dostopno v celotnem besedilu. Če kljub temu želite naročiti gradivo, kliknite gumb Nadaljuj.