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Liu, Jun; Buchholz, D. Bruce; Chang, Robert P. H.; Facchetti, Antonio; Marks, Tobin J.
Advanced materials (Weinheim), June 4, 2010, Letnik: 22, Številka: 21Journal Article
High‐performance flexible transparent thin‐film transistors (TFTs) are demonstrated using amorphous zink indium tin oxide (ZITO) transparent oxide conductor electrodes, an amorphous ZITO transparent oxide semiconductor channel, and a vapor‐deposited self‐assembled nanodielectric (v‐SAND) gate insulator. These TFTs exhibit a large field‐effect mobility of 110 cm2V−1s−1, a current on/off ratio of 104, and a low operating voltage of 1.0 V, along with very good optical transparency and mechanical flexibility.
