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Portavoce, A.; Abbes, O.; Rudzevich, Y.; Chow, L.; Le Thanh, V.; Girardeaux, C.
Scripta materialia, 08/2012, Letnik: 67, Številka: 3Journal Article
The diffusion of a half monolayer of Mn deposited by molecular beam epitaxy on a Ge(001) substrate was studied via secondary ion mass spectrometry. Mn diffused in Ge under extrinsic conditions, exhibiting a solubility of 0.7–0.9%. All the Mn atoms were activated, occupying Ge substitutional sites and exhibiting a negative charge, in agreement with semiconductor doping theory. The diffusion mechanism being vacancy (V)-mediated, the formation of Mn–V pairs is suggested. Mn surface desorption occurred for temperatures >600°C.
