A Phosphole Oxide-Containing Organogold(III) Complex for Solution-Processable Resistive Memory Devices with Ternary Memory Performances

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A Phosphole Oxide-Containing Organogold(III) Complex for Solution-Processable Resistive Memory Devices with Ternary Memory Performances

Hong, Eugene Yau-Hin; Poon, Chun-Ting; Yam, Vivian Wing-Wah

Journal of the American Chemical Society, 05/2016, Letnik: 138, Številka: 20

Journal Article

A novel class of luminescent phosphole oxide-containing alkynylgold(III) complex has been synthesized, characterized, and applied as active material in the fabrication of solution-processable resistive memory devices. Incorporation of the phosphole oxide moiety in gold(III) system has been demonstrated to provide an extra charge-trapping site, giving rise to intriguing ternary memory performances with distinct and low switching threshold voltages, high OFF/ON1/ON2 current ratio of 1/103/107, and long retention time for the three states. The present study offers vital insights for the future development of multilevel memory devices using small-molecule organometallic compounds.

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Hong, Eugene Yau-Hin | Poon, Chun-Ting | Yam, Vivian Wing-Wah

Dostop do baze podatkov JCR je dovoljen samo uporabnikom iz Slovenije. Vaš trenutni IP-naslov ni na seznamu dovoljenih za dostop, zato je potrebna avtentikacija z ustreznim računom AAI.

Leto	Faktor vpliva		Izdaja		Kategorija		Razvrstitev
Leto	JCR	SNIP	JCR	SNIP	JCR	SNIP	JCR	SNIP

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