Metal‐TADF (thermally activated delayed fluorescence) emitters hold promise in the development of next generation light‐emitting materials for display and lighting applications, examples of which are, however, largely confined to CuI and recently AuI, AgI, and AuIII emitters. Herein is described the design strategy for an unprecedented type of metal‐TADF emitter based on inexpensive tungsten metal chelated with Schiff base ligand that exhibit high emission quantum yields of up to 56 % in solutions and 84 % in thin‐film (5 wt % in 1,3‐bis(N‐carbazolyl)benzene, mCP) at room temperature. Femtosecond time‐resolved emission (fs‐TRE) spectroscopy and DFT calculations were undertaken to decipher the TADF properties. Solution‐processed OLEDs fabricated with the W‐TADF emitter demonstrated external quantum efficiency (EQE) and luminance of up to 15.6 % and 16890 cd m−2, respectively. A lightbulb moment for WVI complexes: Incorporation of arylamino substituents into the ligand scaffold leads to the realization of the first WVI Schiff base complex with TADF properties, which shows Φem of 56 % in solution and 84 % in thin film at room temperature. High‐efficiency solution‐processed W‐OLEDs were fabricated, exhibiting a maximum EQE and luminance of up to 15.6 % and 16890 cd m−2, respectively.