The effect of the additive composition on the electrical resistivity of hot-pressed liquid-phase sintered (LPS)-SiC was investigated, using AlN-RE2O3 (RE = Sc, Nd, Eu, Gd, Ho, Er, Lu) mixtures at a molar ratio of 60:40. All specimens were sintered to densities >95% of the theoretical density by adding 5 wt% in-situ synthesised nano-sized SiC and 1 wt% AlN-RE2O3 additives. Six of the seven SiC ceramics showed very low electrical resistivity, of the order of 10 exp(-4) ohm.m, and this was attributed to the growth of nitrogen-doped SiC grains and the confinement of non-conducting RE-containing phases in the junction areas. The SiC ceramics sintered with AlN-Lu2O3 had a relatively high electrical resistivity (about 10 exp(-2) ohm.m) due to its lower carrier density (about 10 exp(17)/cm3), which was caused by the growth of faceted grains and the resulting weak interface between SiC grains.