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Wang, Zijun; Zhou, Pengcheng; Muecksch, Frauke; Cho, Alice; Ben Tanfous, Tarek; Canis, Marie; Witte, Leander; Johnson, Brianna; Raspe, Raphael; Schmidt, Fabian; Bednarski, Eva; Da Silva, Justin; Ramos, Victor; Zong, Shuai; Turroja, Martina; Millard, Katrina G; Yao, Kai-Hui; Shimeliovich, Irina; Dizon, Juan; Kaczynska, Anna; Jankovic, Mila; Gazumyan, Anna; Oliveira, Thiago Y; Caskey, Marina; Gaebler, Christian; Bieniasz, Paul D; Hatziioannou, Theodora; Nussenzweig, Michel C
The Journal of experimental medicine, 12/2022, Letnik: 219, Številka: 12Journal Article
Individuals who receive a third mRNA vaccine dose show enhanced protection against severe COVID-19, but little is known about the impact of breakthrough infections on memory responses. Here, we examine the memory antibodies that develop after a third or fourth antigenic exposure by Delta or Omicron BA.1 infection, respectively. A third exposure to antigen by Delta breakthrough increases the number of memory B cells that produce antibodies with comparable potency and breadth to a third mRNA vaccine dose. A fourth antigenic exposure with Omicron BA.1 infection increased variant-specific plasma antibody and memory B cell responses. However, the fourth exposure did not increase the overall frequency of memory B cells or their general potency or breadth compared to a third mRNA vaccine dose. In conclusion, a third antigenic exposure by Delta infection elicits strain-specific memory responses and increases in the overall potency and breadth of the memory B cells. In contrast, the effects of a fourth antigenic exposure with Omicron BA.1 are limited to increased strain-specific memory with little effect on the potency or breadth of memory B cell antibodies. The results suggest that the effect of strain-specific boosting on memory B cell compartment may be limited.
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JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
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Vir: Osebne bibliografije
in: SICRIS
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