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  • Two‐Dimensional Boronate Es...
    Park, SangWook; Liao, Zhongquan; Ibarlucea, Bergoi; Qi, Haoyuan; Lin, Hung‐Hsuan; Becker, Daniel; Melidonie, Jason; Zhang, Tao; Sahabudeen, Hafeesudeen; Baraban, Larysa; Baek, Chang‐Ki; Zheng, Zhikun; Zschech, Ehrenfried; Fery, Andreas; Heine, Thomas; Kaiser, Ute; Cuniberti, Gianaurelio; Dong, Renhao; Feng, Xinliang

    Angewandte Chemie, May 18, 2020, Letnik: 59, Številka: 21
    Journal Article

    Despite the recent progress in the synthesis of crystalline boronate ester covalent organic frameworks (BECOFs) in powder and thin‐film through solvothermal method and on‐solid‐surface synthesis, respectively, their applications in electronics, remain less explored due to the challenges in thin‐film processability and device integration associated with the control of film thickness, layer orientation, stability and crystallinity. Moreover, although the crystalline domain sizes of the powder samples can reach micrometer scale (up to ≈1.5 μm), the reported thin‐film samples have so far rather small crystalline domains up to 100 nm. Here we demonstrate a general and efficient synthesis of crystalline two‐dimensional (2D) BECOF films composed of porphyrin macrocycles and phenyl or naphthyl linkers (named as 2D BECOF‐PP or 2D BECOF‐PN) by employing a surfactant‐monolayer‐assisted interfacial synthesis (SMAIS) on the water surface. The achieved 2D BECOF‐PP is featured as free‐standing thin film with large single‐crystalline domains up to ≈60 μm2 and tunable thickness from 6 to 16 nm. A hybrid memory device composed of 2D BECOF‐PP film on silicon nanowire‐based field‐effect transistor is demonstrated as a bio‐inspired system to mimic neuronal synapses, displaying a learning–erasing–forgetting memory process. Mimicking synaptic plasticity: A free‐standing boronate ester‐linked 2D COF thin film has been achieved with record crystalline domain size as large as ≈60 μm2 via an interfacial synthesis method. This film was integrated into an organic thin film/Si nanowire‐based field effect transistor to mimic neuronal synapses capable of learning–erasing–forgetting memory process.