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Neudeck, Philip G.; Krasowski, Michael; Spry, David J.; Prokop, Norman F.; Chen, Liang Yu
Materials science forum, 07/2019, Letnik: 963Journal Article
Operational testing of prototopye 4H-SiC JFET ICs across an unrivaled ambient temperature span in excess of 1000 °C, from-190 °C to +812 °C, has been demonstrated without any change/adjustment of input signal levels or power supply voltages. This unique ability is expected to simplify infusion of this IC technology into a broader range of beneficial applications.
