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    Makhotkin, I. A.; Yakunin, S. N.; Seregin, A. Yu; Shaitura, D. S.; Tsetlin, M. B.; Tereshchenko, E. Yu

    Crystallography reports, 09/2011, Letnik: 56, Številka: 5
    Journal Article

    The change in the phase composition of thin-film layered AlPdRe nanostructures during annealing, which led to the formation of a quasicrystalline layer, has been studied in situ. It is shown that the Al{sub 3}Pd phase is formed at a temperature above 260 Degree-Sign C, which transforms into the AlPd phase at 580 Degree-Sign C, and the icosahedral quasicrystalline Al-Pd-Re phase is formed at 680 Degree-Sign C.