We report in this article on the measurement of the optical absorption of moderately doped crystalline silicon samples at 1550 nm, which is a candidate material for the main optics of the low temperature interferometer of the Einstein Telescope (ET). We observe a nearly constant absorption from room temperature down to cryogenic temperatures for two silicon samples presenting an optical absorption of 0.029 cm−1 and 780 ppm cm−1, both crystals doped with boron. This is in contradiction to what was assumed previously-a negligible optical absorption at low temperature due to the carrier freezeout. As the main consequence, if the silicon intrinsic absorption can not be lowered, the cross section of the mirror suspension of the ET must be increased to be able to carry away the excess heat generated by the partially absorbed laser beam during the operation of the interferometer.