We present a detailed analysis of the photo-current potentials and losses in thin film crystalline silicon solar cells on glass. The effects of texturing the silicon backside, applying a diffuse back reflector and a textured anti-reflection foil were analysed. Light beam induced current measurements were used to determine the losses due to local effects like the absorber contact, cracks in the absorber and grain boundaries. Detailed loss analysis in combination with ray-tracing simulations showed that the maximum light trapping potential imposed by geometrical optics has nearly been achieved. The photocurrent losses due to incomplete carrier collection and parasitic absorption were accounted for using a theoretical model. For the investigated, textured, n-doped cell with reflector and anti-reflection foil, the short circuit current density (JSC) was 28.9mA/cm2 and the main loss factors were direct reflection (3.4mA/cm2), electrical shading effects due to the absorber contact (3.1mA/cm2) and incomplete carrier collection due to surface/bulk recombination (1.6mA/cm2). Using the presented light trapping scheme we obtained the following efficiencies: 11.8% for a p-doped and 12.1% for an n-doped crystalline silicon absorber. Finally, the potentials for efficiencies beyond 14% are discussed. Display omitted •12 % efficiency was obtained for 11 µm thick, liquid-phase crystalized Si on glass.•Using KOH texturing and anti-reflection foil, a JSC of 28.9 mA/cm2 was achieved.•Current density losses were characterized using LBIC, optics, EQE and simulations.•Main loss factors were direct reflection, the absorber contact and recombination.•Max. light trapping potential was almost reached, using a backside pyramid texture.