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  • Epitaxial growth of Ca(Ge 1...
    Yoshizaki, Takashi; Terada, Tsukasa; Uematsu, Yuto; Ishibe, Takafumi; Nakamura, Yoshiaki

    Applied physics express, 05/2024, Letnik: 17, Številka: 5
    Journal Article

    Abstract Two-dimensional (2D) material is drawing considerable attention as a promising thermoelectric material. This study establishes the formation method of renewed Ca-intercalated group IV 2D materials, Ca(Ge 1− x Sn x ) 2 crystals including germanene-based 2D layers. The solid phase epitaxy allows us to form epitaxial Ca(Ge 1− x Sn x ) 2 on Si. Atomic force microscopy reveals that the Ca(Ge 1− x Sn x ) 2 has island structures. X-ray diffraction proved the epitaxial growth of the Ca(Ge 1− x Sn x ) 2 island structures and the increase of the c -axis lattice constant with Sn content increase. The formation of this renewed intermetallic compound including group IV 2D layer opens an avenue for high performance thermoelectric generator/Si.