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Chen, Po-Wei; Hsiao, Po-Wen; Chen, Hsuan-Jen; Lee, Bo-Sheng; Chang, Kai-Ping; Yen, Chao-Chun; Horng, Ray-Hua; Wuu, Dong-Sing
Scientific reports, 11/2021, Letnik: 11, Številka: 1Journal Article
Abstract The mechanism of carrier recombination in downsized μ-LED chips from 100 × 100 to 10 × 10 μm 2 on emission performance was systemically investigated. All photolithography processes for defining the μ-LED pattern were achieved by using a laser direct writing technique. This maskless technology achieved the glass-mask-free process, which not only can improve the exposure accuracy but also save the development time. The multi-functional SiO 2 film as a passivation layer successfully reduced the leakage current density of μ-LED chips compared with the μ-LED chips without passivation layer. As decreasing the chip size to 10 × 10 μm 2 , the smallest chip size exhibited the highest ideality factor, which indicated the main carrier recombination at the high-defect-density zone in μ-LED chip leading to the decreased emission performance. The blue-shift phenomenon in the electroluminescence spectrum with decreasing the μ-LED chip size was due to the carrier screening effect and the band filling effect. The 10 × 10 μm 2 μ-LED chip exhibited high EQE values in the high current density region with a less efficiency droop, and the max-EQE value was 18.8%. The luminance of 96 × 48 μ-LED array with the chip size of 20 × 20 μm 2 exhibited a high value of 516 nits at the voltage of 3 V.
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JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
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in: SICRIS
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