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Chuang, Pojen; Ho, Sheng-Chin; Smith, L W; Sfigakis, F; Pepper, M; Chen, Chin-Hung; Fan, Ju-Chun; Griffiths, J P; Farrer, I; Beere, H E; Jones, G A C; Ritchie, D A; Chen, Tse-Ming
Nature nanotechnology, 01/2015, Letnik: 10, Številka: 1Journal Article
The spin field-effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field-effect transistor for information processing has yet to be achieved, owing to several fundamental challenges such as the low spin-injection efficiency due to resistance mismatch, spin relaxation and the spread of spin precession angles. Alternative spin transistor designs have therefore been proposed, but these differ from the field-effect transistor concept and require the use of optical or magnetic elements, which pose difficulties for incorporation into integrated circuits. Here, we present an all-electric and all-semiconductor spin field-effect transistor in which these obstacles are overcome by using two quantum point contacts as spin injectors and detectors. Distinct engineering architectures of spin-orbit coupling are exploited for the quantum point contacts and the central semiconductor channel to achieve complete control of the electron spins (spin injection, manipulation and detection) in a purely electrical manner. Such a device is compatible with large-scale integration and holds promise for future spintronic devices for information processing.
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