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  • Spin effect on the low-temp...
    Shashkin, A A; Melnikov, M Yu; Dolgopolov, V T; Radonjić, M M; Dobrosavljević, V; Huang, S-H; Liu, C W; Zhu, Amy Y X; Kravchenko, S V

    Scientific reports, 03/2022, Letnik: 12, Številka: 1
    Journal Article

    The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells. We find that the temperature Formula: see text, at which the resistivity exhibits a maximum, is close to the renormalized Fermi temperature. However, rather than increasing along with the Fermi temperature, the value Formula: see text decreases appreciably for spinless electrons in spin-polarizing (parallel) magnetic fields. The observed behaviour of Formula: see text cannot be described by existing theories. The results indicate the spin-related origin of the effect.