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Prudkovskiy, Vladimir S; Hu, Yiran; Zhang, Kaimin; Hu, Yue; Ji, Peixuan; Nunn, Grant; Zhao, Jian; Shi, Chenqian; Tejeda, Antonio; Wander, David; De Cecco, Alessandro; Winkelmann, Clemens B; Jiang, Yuxuan; Zhao, Tianhao; Wakabayashi, Katsunori; Jiang, Zhigang; Ma, Lei; Berger, Claire; de Heer, Walt A
Nature communications, 12/2022, Letnik: 13, Številka: 1Journal Article
Graphene's original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge state has a mean free path that is greater than 50 microns, 5000 times greater than the bulk states and involves a theoretically unexpected Majorana-like zero-energy non-degenerate quasiparticle that does not produce a Hall voltage. In seamless integrated structures, the edge state forms a zero-energy one-dimensional ballistic network with essentially dissipationless nodes at ribbon-ribbon junctions. Seamless device structures offer a variety of switching possibilities including quantum coherent devices at low temperatures. This makes epigraphene a technologically viable graphene nanoelectronics platform that has the potential to succeed silicon nanoelectronics.
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in: SICRIS
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