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  • The Landé factors of electr...
    Kirstein, E; Yakovlev, D R; Glazov, M M; Zhukov, E A; Kudlacik, D; Kalitukha, I V; Sapega, V F; Dimitriev, G S; Semina, M A; Nestoklon, M O; Ivchenko, E L; Kopteva, N E; Dirin, D N; Nazarenko, O; Kovalenko, M V; Baumann, A; Höcker, J; Dyakonov, V; Bayer, M

    Nature communications, 06/2022, Letnik: 13, Številka: 1
    Journal Article

    The Landé or g-factors of charge carriers are decisive for the spin-dependent phenomena in solids and provide also information about the underlying electronic band structure. We present a comprehensive set of experimental data for values and anisotropies of the electron and hole Landé factors in hybrid organic-inorganic (MAPbI , MAPb(Br Cl ) , MAPb(Br Cl ) , FAPbBr , FA Cs PbI Br , MA=methylammonium and FA=formamidinium) and all-inorganic (CsPbBr ) lead halide perovskites, determined by pump-probe Kerr rotation and spin-flip Raman scattering in magnetic fields up to 10 T at cryogenic temperatures. Further, we use first-principles density functional theory (DFT) calculations in combination with tight-binding and k ⋅ p approaches to calculate microscopically the Landé factors. The results demonstrate their universal dependence on the band gap energy across the different perovskite material classes, which can be summarized in a universal semi-phenomenological expression, in good agreement with experiment.