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Kuo, D-H; Hsu, J-P
Journal of crystal growth, 06/2013, Letnik: 372Journal Article
Dense Cu sub(2)ZnSnSe sub(4) (CZTSe) thin films with large grains of 1-6 mu m were prepared by sputtering a metallic Cu-Zn-Sn target followed by a selenization process at 600 degree C. Selenization of Cu-Zn-Sn metallic films with the aid of (SnSe sub(2)+Se) and CuSe sub(2) was explained, which involved the nucleation and growth stages. The design of modified Cu(In,Ga)Se sub(2) barrier layer prevented high-temperature reactions between the Mo electrode and as-deposited film and led to a pore-free interface. Using our simple approach, passivated and large grains were formed in an absorption layer, which is important for fabricating CZTSe solar cells.
