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Salii, R A; Mintairov, M A; Mintairov, S A; Nakhimovich, M V; Shvarts, M Z; Kalyuzhnyy, N A
Journal of physics. Conference series, 11/2021, Letnik: 2103, Številka: 1Journal Article
Abstract In the work, the effect of In 0.8 Ga 0.2 As quantum dots position in the i-region of a GaAs solar cell on its spectral and photoelectric characteristics has been investigated. Three solar cell structures were obtained by metal-organic vapor-phase epitaxy, in which layers of quantum dots were placed in the middle of the i-region and also have been shifted to the base and the emitter. As a result, it has been shown that the solar cell with a quantum dot array shifted to the base demonstrates the smallest open-circuit voltage drop and, accordingly, a higher efficiency value.
