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  • Carrier mobility in the cha...
    Carrier mobility in the channel of AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN heterostructures, limited by different scattering mechanisms: experiment and calculation
    Arteev, D S; Sakharov, A V; Lundin, W V; Zakheim, D A; Zavarin, E E; Tsatsulnikov, A F

    Journal of physics. Conference series, 11/2019, Letnik: 1400, Številka: 7
    Journal Article

    Calculational analysis of different scattering mechanisms of two-dimensional electron gas in AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN high-electron mobility transistors was carried out. It was found that the mobility of AlGaN-based structures at room temperature is mainly limited by inherent scattering mechanisms (namely, optical and acoustic phonon scattering), while the mobility in our InAlN-based structures is limited by the interface roughness scattering. The low-temperature mobility is found to be limited by the interface roughness scattering for both AlGaN- and InAlN-based structures.

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