III-N heterostructures for monolithic integration of enhancement/depletion-mode high-electron-mobility transistors

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III-N heterostructures for monolithic integration of enhancement/depletion-mode high-electron-mobility transistors

Arteev, D S; Sakharov, A V; Nikolaev, A E; Lundin, W V; Tsatsulnikov, A F

Journal of physics. Conference series, 03/2020, Letnik: 1482, Številka: 1

Journal Article

Simulation analysis of III-N two-dimensional electron gas-based structures that could be used for stable monolithically integrated enhancement/depletion-mode circuits was carried out. Three different designs were proposed and analysed, including a novel p-GaN/AlN-GaN SPSL/GaN, which is expected to have lower ON-state resistance and higher transconductance than conventional normally-off GaN-based transistors.

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Arteev, D S | Sakharov, A V | Nikolaev, A E | Lundin, W V | Tsatsulnikov, A F

Dostop do baze podatkov JCR je dovoljen samo uporabnikom iz Slovenije. Vaš trenutni IP-naslov ni na seznamu dovoljenih za dostop, zato je potrebna avtentikacija z ustreznim računom AAI.

Leto	Faktor vpliva		Izdaja		Kategorija		Razvrstitev
Leto	JCR	SNIP	JCR	SNIP	JCR	SNIP	JCR	SNIP

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