Development of techniques for the formation of a planar electric vacuum diode based on an array of CNTs synthesized at the edge of the Co-Nb-N-(O) film

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Development of techniques for the formation of a planar electric vacuum diode based on an array of CNTs synthesized at the edge of the Co-Nb-N-(O) film

Eritsyan, G S; Gromov, D G; Dubkov, S V; Kitsyuk, E P; Savitskiy, A I; Dudin, A A

Journal of physics. Conference series, 11/2021, Letnik: 2103, Številka: 1

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Abstract This work shows the possibility of forming a planar diode structure based on carbon nanotubes formed on a catalytic alloy film Co-Nb-N-(O). The paper presents a technological route for the formation of a planar diode structure Si/SiO 2 /Si 3 N 4 /Co-Nb-N-(O)/SiO 2 and studies the emission characteristics. The current-voltage characteristic of the obtained diode structure in the Fowler-Nordheim coordinates is close to linear in the range from 15 to 22 V, which confirms the phenomenon of electron emission.

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Leto	Faktor vpliva		Izdaja		Kategorija		Razvrstitev
Leto	JCR	SNIP	JCR	SNIP	JCR	SNIP	JCR	SNIP

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